| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,733 pcs
|
1733 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,207 pcs
|
1207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Fault Protection | |
| Halogen Free | |
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The Infineon Technologies BTS117 is an N-channel vertical power FET designed as a smart low-side power switch. It utilizes Smart SIPMOS technology and provides embedded protection functions including overvoltage, overload, short circuit, and thermal shutdown with latch. This HITFET is AEC qualified and RoHS compliant.
Key electrical characteristics include a 60V drain-source voltage, a 7A current limit, and a nominal load current of 3.5A. The on-state resistance is 100 mΩ. It features logic-level input with input protection (ESD) and status feedback capability. The device is designed for 12V and 24V DC applications, replacing electromechanical relays and discrete circuits.
Packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package, the BTS117 operates within a temperature range of -40°C to +150°C. Its thermal resistance junction-to-ambient is 45 K/W when mounted on a PCB. The device is suitable for resistive, inductive, and capacitive loads in switching or linear applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40°C to +150°C junction temperature.
The BTS117 is available in TO-263-3 (D2Pak) and PG-TO220-3-5 packages.
60V.
3.5A.
80 mΩ typical.
Current limiting (7A fixed), over-voltage protection, and over-temperature shutdown.
On/Off logic, non-inverting input.