| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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380 pcs
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380 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies AG BTS114A is an N-channel enhancement mode MOSFET designed for various power switching applications. It offers a maximum drain-source voltage (Vds) of 50V and a continuous drain current (Id) of 17A at 27°C.
Key electrical characteristics include a low drain-source on-state resistance (Rds(on)) of 0.10 Ohms at 9.0A and 10V gate-source voltage, ensuring efficient power delivery. The device also features a gate threshold voltage (Vgs(th)) typically around 3.0V.
With a thermal resistance (RthJC) of less than 2.5 K/W, the BTS114A is suitable for applications requiring effective heat dissipation. It operates within a wide temperature range of -55°C to +150°C. The MOSFET is packaged in a standard TO-220AB case, facilitating through-hole mounting.
This component also integrates a temperature sensor with thyristor characteristics, providing an additional feature for thermal monitoring and protection within circuits. The drain pin is electrically shorted to the tab for enhanced thermal management.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 50V.
The continuous drain current is 17A at 27°C.
The typical on-state resistance is 0.08 Ohms at 9.0A and 10V.
The operating and storage temperature range is -55°C to +150°C.
The BTS114A is available in a TO-220AB package.
Yes, the BTS114A features a temperature sensor with thyristor characteristic.