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134 pcs
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134 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies BTS112AE3045A is an N-channel enhancement mode MOSFET designed for special purpose applications. It integrates a temperature sensor with thyristor characteristics, providing additional functionality for thermal monitoring.
Key electrical specifications include a drain-source breakdown voltage of 60V and a continuous drain current of 12A at 33°C case temperature. The drain-source on-state resistance (Rds(on)) is a maximum of 0.15 Ohms at 10V gate-source voltage and 7.5A drain current. The device also features a gate threshold voltage typically around 3.0V.
This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. It operates within a wide temperature range of -55°C to +150°C. The integrated temperature sensor provides a forward voltage output that varies with temperature, with a typical value of 1.4V at 10mA and 25°C.
The BTS112AE3045A is designed for applications requiring a robust N-channel MOSFET with built-in thermal sensing capabilities.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 12A at a case temperature of 33°C.
The typical gate threshold voltage is 3.0V.
The typical drain-source on-state resistance is 0.12 Ohms at 10V gate-source voltage and 7.5A drain current.
The package type is TO-220AB.
The operating and storage temperature range is -55°C to +150°C.