| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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526 pcs
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526 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The BT151F-800R from NXP Semiconductors is a thyristor designed for power control applications. This component features a maximum rate of rise of current (di/dt) of 15 A/µs, a critical parameter for ensuring proper switching behavior in high-frequency or high-power circuits.
As a thyristor, the BT151F-800R is a semiconductor device that acts as a switch, controlled by a gate signal. It is suitable for various power switching and control applications where reliable turn-on and turn-off characteristics are required. The device is RoHS3 compliant, indicating adherence to environmental regulations regarding hazardous substances.
Further specifications such as forward current, peak repetitive off-state voltage, gate trigger current, holding current, operating temperature, and package type are not detailed in the available data but are essential for detailed circuit design. Engineers should consult the manufacturer's datasheet for comprehensive electrical and mechanical characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.44 | $6.44 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum rate of rise of current for the BT151F-800R is 15 A/µs.
The BT151F-800R is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BT151F-800R is 1 Unlimited.
The REACH status for the BT151F-800R is REACH Unaffected.