BSZ520N15NS3GATMA1 N-Channel MOSFET rated for 150V drain-source voltage and 21A continuous drain current. Features 52mOhm maximum on-resistance at 18A and 10V gate drive.
Mfr Part #:

BSZ520N15NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated for 150V drain-source voltage and 21A continuous drain current. Features 52mOhm maximum on-resistance at 18A and 10V gate drive.
✓ Total Stock: 4,986 pcs
$ Price Range: $0.22

BSZ520N15NS3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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Non-Authorised Inventory information
4,986 pcs
$0.22 ℹ
Qty Price
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4986 pcs $0.22
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BSZ520N15NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ520N15NS3GATMA1 Description

Short technical summary and product information.

The Infineon BSZ520N15NS3GATMA1 is an N-Channel enhancement mode MOSFET designed for efficient power switching. It is rated for a maximum drain-to-source voltage of 150V and a continuous drain current of 21A at case temperature. The device features a low maximum on-resistance of 52mOhm at 18A drain current and 10V gate drive, enabling high efficiency in power conversion circuits.

 

This MOSFET is housed in a compact 8-PowerTDFN surface-mount package (PG-TSDSON-8) suitable for space-constrained designs. It offers a maximum gate charge of 12nC at 10V and an input capacitance of 890pF at 75V drain-source voltage, contributing to fast switching performance. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 57W at case temperature.

 

Typical applications include DC-DC converters, power management in computing and telecom equipment, and motor control circuits. The device is designed for surface mount assembly and is compatible with standard reflow soldering processes.

BSZ520N15NS3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon BSZ520N15NS3GATMA1 N-Channel MOSFET
Subcategory: Single N-Channel

BSZ520N15NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSZ520N15NS3GATMA1 Estimated Pricing

Qty Low High
1+ $1.59 $1.59
10+ $1.01 $1.01
100+ $0.67 $0.67
500+ $0.58 $0.58
1,000+ $0.54 $0.54
5,000+ $0.54 $0.54
25,000+ $0.40 $0.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ520N15NS3GATMA1 Features

  • N-Channel MOSFET rated for 150V drain-source voltage.
  • Continuous drain current of 21A at case temperature.
  • Low on-resistance of 52mOhm at 18A and 10V.
  • Compact 8-PowerTDFN surface-mount package.
  • Operating temperature range from -55°C to 150°C.

BSZ520N15NS3GATMA1 Applications

  • Used in DC-DC converter power stages.
  • Suitable for power management in computing equipment.
  • Ideal for motor control and drive circuits.
  • Applicable in telecom and networking power supplies.

BSZ520N15NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSZ520N15NS3GATMA1?

The maximum drain-source voltage (Vdss) is 150V.

What is the continuous drain current rating?

The continuous drain current (Id) is 21A at case temperature (Tc).

What is the package type for this MOSFET?

It is housed in an 8-PowerTDFN surface-mount package, also known as PG-TSDSON-8.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSZ520N15NS3GATMA1 RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the maximum on-resistance?

The maximum on-resistance (Rds on) is 52mOhm at a drain current of 18A and gate-source voltage of 10V.

What is the gate charge of this MOSFET?

The maximum gate charge (Qg) is 12nC at a gate-source voltage of 10V.

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