BSZ42DN25NS3GATMA1 N-channel MOSFET from Infineon's OptiMOS 3 family, rated for 250V drain-source voltage and 5A continuous drain current. Features low on-resistance of 425mΩ and is housed in a TSDSON-8 package.
Mfr Part #:

BSZ42DN25NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-channel MOSFET from Infineon's OptiMOS 3 family, rated for 250V drain-source voltage and 5A continuous drain current. Features low on-resistance of 425mΩ and is housed in a TSDSON-8 package.
✓ Total Stock: 16,020 pcs
$ Price Range: $0.35 - $1.44

BSZ42DN25NS3GATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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16,020 pcs
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BSZ42DN25NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ42DN25NS3GATMA1 Description

Short technical summary and product information.

The BSZ42DN25NS3GATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 family, designed for DC-DC conversion applications. It features a maximum drain-source voltage of 250V and continuous drain current of 5A at 25°C case temperature, with a pulsed current capability of 20A. The device offers a low typical on-resistance of 371mΩ (425mΩ maximum) at VGS=10V and ID=2.5A, contributing to high efficiency in power conversion circuits.

 

Key electrical characteristics include a gate threshold voltage range of 2V to 4V, input capacitance of 430pF maximum, and total gate charge of 5.5nC maximum, enabling fast switching. The MOSFET is rated for operation up to 150°C junction temperature and has a power dissipation of 33.8W at 25°C case temperature.

 

The device is housed in a PG-TSDSON-8 package, a surface-mount package suitable for automated assembly. It is RoHS compliant and halogen-free according to IEC61249-2-21, making it suitable for environmentally conscious designs. Typical applications include DC-DC converters, power management in computing and telecom equipment, and other high-voltage switching circuits.

BSZ42DN25NS3GATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon BSZ42DN25NS3GATMA1 N-Channel MOSFET, 250V, 5A, TSDSON-8
Subcategory: N-Channel MOSFET

BSZ42DN25NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSZ42DN25NS3GATMA1 Estimated Pricing

Qty Low High
1+ $1.44 $1.44
10+ $0.90 $0.90
100+ $0.60 $0.60
500+ $0.47 $0.47
1,000+ $0.44 $0.44
5,000+ $0.44 $0.44
25,000+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ42DN25NS3GATMA1 Features

  • N-channel MOSFET rated for 250V drain-source voltage.
  • Continuous drain current of 5A at 25°C.
  • Low on-resistance of 425mΩ maximum.
  • Optimized for DC-DC conversion applications.
  • RoHS compliant and halogen-free.

BSZ42DN25NS3GATMA1 Applications

  • Used in high-voltage DC-DC converter circuits.
  • Suitable for power management in telecom equipment.
  • Ideal for switching power supplies and inverters.

BSZ42DN25NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSZ42DN25NS3GATMA1?

250V.

What is the continuous drain current rating?

5A at 25°C case temperature.

What is the on-resistance?

425mΩ maximum at VGS=10V, ID=2.5A.

What is the operating temperature range?

-55°C to 150°C.

What package is this MOSFET available in?

PG-TSDSON-8.

Is the BSZ42DN25NS3GATMA1 RoHS compliant?

Yes, it is RoHS compliant and halogen-free according to IEC61249-2-21.

What is the gate charge?

5.5nC maximum at VGS=10V.

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