BSZ340N08NS3GATMA1 N-Channel MOSFET with 80V drain-source voltage and 23A continuous drain current. Features low on-resistance of 34mΩ max and fast switching.
Mfr Part #:

BSZ340N08NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 80V drain-source voltage and 23A continuous drain current. Features low on-resistance of 34mΩ max and fast switching.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.34 - $1.54

BSZ340N08NS3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSZ340N08NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ340N08NS3GATMA1 Description

Short technical summary and product information.

The BSZ340N08NS3GATMA1 is an N-Channel power MOSFET from Infineon Technologies, part of the OptiMOS 3 family. It is designed for high-frequency switching applications and optimized for DC/DC converters. The device offers a drain-source voltage of 80V and a continuous drain current of 23A at 25°C case temperature, with a pulsed drain current rating of 92A.

 

The MOSFET features a maximum drain-source on-resistance of 34mΩ at V_GS=10V and I_D=12A, and 66mΩ at V_GS=6V and I_D=6A. It has a gate threshold voltage range of 2V to 3.5V, and a total gate charge of 6.8nC typical (9.1nC max) at V_GS=10V. The device is 100% avalanche tested and has an avalanche energy rating of 20mJ.

 

The BSZ340N08NS3GATMA1 is housed in a PG-TSDSON-8 surface-mount package, also known as 8-PowerTDFN. It is Pb-free plated, RoHS compliant, and halogen-free according to IEC61249-2-21. The operating junction temperature range is -55°C to 150°C.

BSZ340N08NS3GATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS 3
Canonical Name: N-Channel 80V 23A Power MOSFET
Subcategory: Single N-Channel

BSZ340N08NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSZ340N08NS3GATMA1 Estimated Pricing

Qty Low High
1+ $1.54 $1.54
10+ $0.96 $0.96
100+ $0.63 $0.63
500+ $0.50 $0.50
1,000+ $0.42 $0.42
2,500+ $0.40 $0.40
5,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ340N08NS3GATMA1 Features

  • N-Channel 80V power MOSFET.
  • 23A continuous drain current rating.
  • Low 34mΩ maximum on-resistance.
  • Fast switching for high-frequency circuits.
  • RoHS compliant and halogen-free.

BSZ340N08NS3GATMA1 Applications

  • Ideal for high-frequency switching circuits.
  • Optimized for DC/DC converter designs.
  • Suitable for power management applications.
  • Used in surface-mount power designs.

BSZ340N08NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSZ340N08NS3GATMA1?

The maximum drain-source voltage is 80V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 23A at Tc=25°C, 15A at Tc=100°C, and 6A at Ta=25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSZ340N08NS3GATMA1 RoHS compliant?

Yes, the device is RoHS compliant and has Pb-free plating.

What is the package type of this MOSFET?

The package is PG-TSDSON-8, also known as 8-PowerTDFN, and it is surface mount.

What is the maximum on-resistance at Vgs=10V?

The maximum on-resistance is 34mΩ at Vgs=10V and Id=12A.

What is the gate threshold voltage range?

The gate threshold voltage ranges from 2V minimum to 3.5V maximum, with a typical value of 2.8V.

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