| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,672 pcs
|
29672 pcs | On Request | 1 | On Request | On Request | 1411+ | On Request | On Request | |
|
867 pcs
|
867 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSZ22DN20NS3G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 7A at case temperature (Tc). The device has a maximum on-resistance of 225mΩ at a gate drive of 10V and 3.5A drain current.
This MOSFET is designed for efficient power switching applications. It offers a maximum gate charge of 5.6nC at 10V and an input capacitance of 430pF at 100V drain-source voltage, enabling fast switching with low drive requirements. The gate threshold voltage is 4V maximum at 13µA drain current.
The device is housed in an 8-PowerTDFN package (supplier device package PG-TSDSON-8-1) and is intended for surface mount assembly. It can dissipate up to 34W at case temperature and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.09 | $2.09 |
| 10+ | $1.29 | $1.29 |
| 100+ | $0.85 | $0.85 |
| 500+ | $0.67 | $0.67 |
| 1,000+ | $0.57 | $0.57 |
| 2,500+ | $0.53 | $0.53 |
| 5,000+ | $0.45 | $0.45 |
| 10,000+ | $0.43 | $0.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The maximum continuous drain current is 7A at case temperature (Tc).
The maximum on-resistance is 225mΩ at a gate-source voltage of 10V and drain current of 3.5A.
It comes in an 8-PowerTDFN surface mount package, also known as PG-TSDSON-8-1.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 4V at a drain current of 13µA.
The maximum power dissipation is 34W at case temperature (Tc).