| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44 pcs
|
44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Infineon BSZ215CHXTMA1 is a complementary N-channel and P-channel small signal MOSFET from the OptiMOS family, designed for space-constrained applications requiring both transistor polarities in a single package. It features a common drain configuration and is qualified to AEC Q101 for automotive use.
The N-channel transistor has a minimum drain-source breakdown voltage of 20V and delivers up to 5.1A continuous drain current at 25°C. The P-channel offers -20V breakdown and -3.2A continuous drain current. On-resistance is as low as 55mΩ for the N-channel and 150mΩ for the P-channel at 4.5V gate drive, with logic-level threshold voltages allowing operation at 2.5V.
Operating over a junction temperature range of -55°C to 175°C, the device is 100% lead-free, RoHS compliant, and halogen-free according to IEC61246-21. It is offered in the PG-TSDSON-8 surface-mount package with a maximum power dissipation of 2.5W on a PCB with 6cm² cooling area.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.02 | $2.02 |
| 10+ | $1.29 | $1.29 |
| 100+ | $0.87 | $0.87 |
| 500+ | $0.69 | $0.69 |
| 1,000+ | $0.59 | $0.59 |
| 5,000+ | $0.57 | $0.57 |
| 10,000+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel continuous drain current is 5.1A at TA=25°C and 3.6A at TA=100°C. Pulsed drain current is 20A at TA=25°C.
The P-channel drain-source on-resistance is typically 95mΩ and maximum 150mΩ at VGS=-4.5V, ID=-3.2A.
The junction operating and storage temperature range is -55°C to 175°C.
The datasheet states the part is 100% lead-free and RoHS compliant. It is also halogen-free per IEC61246-21.
The device is supplied in a PG-TSDSON-8 surface-mount package.
The N-channel gate threshold voltage is minimum 0.8V, typical 1.1V, and maximum 1.4V at ID=110µA.
Yes, the BSZ215CHXTMA1 is qualified according to AEC Q101.