| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | 1828 | On Request | On Request | |
|
122 pcs
|
122 pcs | On Request | 1 | On Request | On Request | 1344+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The BSZ165N04NSG is an N-Channel MOSFET manufactured by Infineon Technologies. This component is designed for power switching applications, featuring a maximum drain-source voltage of 40V and a continuous drain current of up to 31A at 25°C.
Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 16.5 mOhm when VGS is 10V and ID is 16.5A. The device supports a gate-source voltage (Vgs) of up to 20V.
The MOSFET is housed in a TDSON-8 package, suitable for surface mounting. Its specifications make it a suitable choice for various power management circuits where efficient switching and low on-state resistance are critical.
Environmental compliance includes RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are based on existing database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The maximum Rds(on) is 16.5 mOhm at VGS=10V, ID=16.5A.
The maximum continuous drain current is 31A at TC=25°C.
The maximum gate-source voltage is 20V.
The BSZ165N04NSG is available in a TDSON-8 package.