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BSZ160N10NS3GATMA1 N-Channel MOSFET from Infineon, rated for 100V drain-source voltage and 40A continuous drain current. Features low on-resistance of 16mΩ and is packaged in a PG-TSDSON-8 surface mount package.
Mfr Part #:

BSZ160N10NS3GATMA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon, rated for 100V drain-source voltage and 40A continuous drain current. Features low on-resistance of 16mΩ and is packaged in a PG-TSDSON-8 surface mount package.
✓ Total Stock: 11,081 pcs
$ Price Range: $0.55 - $2.14

BSZ160N10NS3GATMA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
11,020 pcs
On Request
11020 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
61 pcs
On Request
61 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSZ160N10NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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BSZ160N10NS3GATMA1 Description

Short technical summary and product information.

The BSZ160N10NS3GATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 series. It is designed for high-frequency switching applications and DC/DC converters. The device features a drain-source breakdown voltage of 100V and a continuous drain current of 40A at Tc=25°C (8A at Ta=25°C). The maximum drain-source on-resistance is 16mΩ at Vgs=10V, ensuring low conduction losses. The gate threshold voltage ranges from 2V to 3.5V at Id=33µA. The MOSFET is 100% avalanche tested and supports a single-pulse avalanche energy of 80mJ. Dynamic characteristics include typical input capacitance of 1300pF and typical gate charge of 25nC at Vgs=10V. The device is packaged in a compact PG-TSDSON-8 (8-PowerTDFN) surface mount package, which offers excellent thermal performance with a junction-to-case thermal resistance of 2.1 K/W. The operating junction temperature range is -55°C to 150°C. The device is RoHS compliant and halogen-free according to IEC61249-2-21.

BSZ160N10NS3GATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies BSZ160N10NS3GATMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

BSZ160N10NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSZ160N10NS3GATMA1 Estimated Pricing

Qty Low High
1+ $2.14 $2.14
10+ $1.28 $1.28
100+ $0.88 $0.88
500+ $0.71 $0.71
1,000+ $0.64 $0.64
2,500+ $0.58 $0.58
5,000+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ160N10NS3GATMA1 Features

  • N-channel MOSFET with 100V drain-source voltage rating.
  • Continuous drain current of 40A at case temperature 25°C.
  • Low on-resistance of 16mΩ maximum at Vgs=10V.
  • Optimized for high-frequency switching applications.
  • RoHS compliant and halogen-free packaging.

BSZ160N10NS3GATMA1 Applications

  • Ideal for high-frequency DC/DC converter circuits.
  • Suitable for power management in telecom and computing.
  • Used in switch-mode power supplies and motor drives.
  • Applicable for battery protection and load switching.

BSZ160N10NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSZ160N10NS3GATMA1?

100V.

What is the continuous drain current rating?

40A at Tc=25°C, 28A at Tc=100°C, and 8A at Ta=25°C.

What is the on-resistance of the MOSFET?

16mΩ maximum at Vgs=10V, Id=20A.

What is the gate threshold voltage?

2V minimum, 3.5V maximum at Id=33µA.

What is the package type of the BSZ160N10NS3GATMA1?

PG-TSDSON-8 (8-PowerTDFN) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the BSZ160N10NS3GATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free according to IEC61249-2-21.

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