Mfr Part #:

BSZ160N10NS3G

Mfr Name: Infineon

The Infineon BSZ160N10NS3G is an N Channel MOSFET with a 100V drain-source voltage and 8A continuous drain current. It is supplied in a TSDSON-8 surface mount package.

✓ Total Stock: 9,789 pcs

$ Price Range: $0.99

BSZ160N10NS3G Available from 4 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	5,533 pcs On Request	5533 pcs	On Request	1	On Request	On Request	1615+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	4,030 pcs On Request	4030 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	150 pcs On Request	150 pcs	On Request	1	On Request	On Request	1227	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	76 pcs On Request	76 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSZ160N10NS3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
FET Type	N Channel
Mounting Type	Surface Mount
Power Dissipation	2.1 W @ Ta = 25°C
SVHC Present	Present

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BSZ160N10NS3G Description

Short technical summary and product information.

The Infineon BSZ160N10NS3G is an N Channel MOSFET designed for power switching applications. It features a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 8A at 25°C. The MOSFET exhibits a low on-resistance (Rds(on)) of 16mOhm at a gate-source voltage (Vgs) of 10V and a drain current of 20A.

With a gate threshold voltage (Vgs(th)) of 3.5V at 33µA, this component is suitable for various electronic circuits requiring efficient power control. The maximum power dissipation is rated at 2.1W at 25°C ambient temperature.

The BSZ160N10NS3G is packaged in a TSDSON-8 surface mount package, making it suitable for automated assembly processes. Its robust specifications make it a reliable choice for designers working on power management solutions.

This MOSFET is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1.

BSZ160N10NS3G Quick Information

Product Type: MOSFET

Series: OptiMOS

Canonical Name: Infineon BSZ160N10NS3G N Channel MOSFET

Subcategory: N Channel MOSFET

BSZ160N10NS3G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSZ160N10NS3G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ160N10NS3G Features

100V drain-source voltage rating.
8A continuous drain current capability.
Low 16mOhm on-resistance.
TSDSON-8 surface mount package.
N Channel MOSFET type.

BSZ160N10NS3G Applications

Used in DC-DC converter circuits
Suitable for power management systems
Ideal for load switching applications
Common in battery protection circuits
Applicable for motor drive control

BSZ160N10NS3G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the BSZ160N10NS3G MOSFET?

The drain-source voltage (Vds) is 100 V.

What is the continuous drain current for the BSZ160N10NS3G?

The continuous drain current (Id) is 8 A at 25°C.

What is the on-resistance of the BSZ160N10NS3G MOSFET?

The Rds(on) is 16 mOhm at 20A and 10V.

What is the gate threshold voltage for the BSZ160N10NS3G?

The gate threshold voltage (Vgs(th)) is 3.5 V at 33µA.

What is the package type for the BSZ160N10NS3G?

The package type is TSDSON-8.

What is the RoHS status of the BSZ160N10NS3G?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The MSL is Level 1.