BSZ146N10LS5ATMA1 N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 40A continuous drain current. Features low on-resistance of 14.6mOhm and surface mount PG-TSDSON-8-FL package.
Mfr Part #:

BSZ146N10LS5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 40A continuous drain current. Features low on-resistance of 14.6mOhm and surface mount PG-TSDSON-8-FL package.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.57 - $2.32

BSZ146N10LS5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSZ146N10LS5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ146N10LS5ATMA1 Description

Short technical summary and product information.

The BSZ146N10LS5ATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is rated for a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 40 A at 25°C case temperature. The device features a low maximum on-resistance (Rds(on)) of 14.6 mOhm at a drain current of 20 A and gate-source voltage of 10 V. The gate threshold voltage (Vgs(th)) is 2.3 V maximum at 23 µA drain current. Gate charge (Qg) is 3.2 nC maximum at 4.5 V, and input capacitance (Ciss) is 1300 pF maximum at 50 V drain-source voltage. Maximum power dissipation is 52 W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is offered in an 8-PowerTDFN package (supplier device package PG-TSDSON-8-FL) for surface mount applications. It is suitable for switching and power management circuits requiring high efficiency and compact footprint.

BSZ146N10LS5ATMA1 Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies BSZ146N10LS5ATMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

BSZ146N10LS5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSZ146N10LS5ATMA1 Estimated Pricing

Qty Low High
1+ $2.32 $2.32
10+ $1.38 $1.38
100+ $0.96 $0.96
500+ $0.78 $0.78
1,000+ $0.69 $0.69
2,500+ $0.64 $0.64
5,000+ $0.57 $0.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ146N10LS5ATMA1 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rated at 40A.
  • Low on-resistance of 14.6 milliohms.
  • Surface mount PG-TSDSON-8-FL package.
  • Operating temperature range -55°C to 150°C.

BSZ146N10LS5ATMA1 Applications

  • Used in DC-DC converter circuits.
  • Suitable for power management applications.
  • Ideal for load switching and motor control.
  • Applicable in high-frequency switching designs.

BSZ146N10LS5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSZ146N10LS5ATMA1?

100 V.

What is the continuous drain current at 25°C?

40 A.

What is the on-resistance (Rds(on))?

14.6 mOhm maximum at 20A drain current and 10V gate-source voltage.

What is the gate threshold voltage?

2.3 V maximum at 23 µA drain current.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is the BSZ146N10LS5ATMA1 available in?

8-PowerTDFN (PG-TSDSON-8-FL) surface mount package.

Is the BSZ146N10LS5ATMA1 RoHS compliant?

RoHS3 compliant (unverified).

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