BSZ096N10LS5ATMA1 Infineon BSZ096N10LS5ATMA1 is a 100V N-Channel OptiMOS 5 power MOSFET in a PG-TSDSON-8 FL surface-mount package. It offers a 62A continuous drain current, low 9.6 mΩ typical on-resistance, and logic-level gate drive.
Mfr Part #:

BSZ096N10LS5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BSZ096N10LS5ATMA1 is a 100V N-Channel OptiMOS 5 power MOSFET in a PG-TSDSON-8 FL surface-mount package. It offers a 62A continuous drain current, low 9.6 mΩ typical on-resistance, and logic-level gate drive.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.70 - $2.39

BSZ096N10LS5ATMA1 Available from 1 distributor

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BSZ096N10LS5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ096N10LS5ATMA1 Description

Short technical summary and product information.

The Infineon BSZ096N10LS5ATMA1 is an N-channel enhancement mode power MOSFET built on the OptiMOS 5 technology platform. It is designed for high-frequency switching applications and features a drain-source breakdown voltage of 100V, a continuous drain current of 62A at 25°C case temperature, and a maximum on-resistance of 9.6 mΩ at 10V gate drive.

 

This MOSFET is optimized for DC/DC converters and offers low gate charge (22 nC typical at Vgs=10V) and low output charge (30 nC), reducing switching losses. It is 100% avalanche tested with a single-pulse avalanche energy rating of 82 mJ.

 

The device is housed in a PG-TSDSON-8 FL (8-PowerTDFN) surface-mount package. It is RoHS compliant, halogen-free, and features Pb-free plating. The operating junction temperature range is -55°C to +150°C.

BSZ096N10LS5ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: BSZ096N10LS5 OptiMOS 5 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

BSZ096N10LS5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSZ096N10LS5ATMA1 Estimated Pricing

Qty Low High
1+ $2.39 $2.39
10+ $1.53 $1.53
100+ $1.04 $1.04
500+ $0.83 $0.83
1,000+ $0.75 $0.75
2,500+ $0.74 $0.74
5,000+ $0.70 $0.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ096N10LS5ATMA1 Features

  • 100V drain-source voltage rating.
  • 62A continuous drain current capability.
  • 9.6 mΩ typical on-resistance at 10V.
  • Logic-level gate drive threshold.
  • 100% avalanche tested design.

BSZ096N10LS5ATMA1 Applications

  • Ideal for high-frequency DC/DC converters.
  • Used in power management for telecom.
  • Suitable for server and computing power supplies.
  • Applicable in motor drive circuits.

BSZ096N10LS5ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSZ096N10LS5ATMA1?

The maximum drain-source voltage (Vds) is 100 V.

What is the package type for this MOSFET?

The device is offered in a PG-TSDSON-8 FL (8-PowerTDFN) surface-mount package.

What is the operating temperature range of the BSZ096N10LS5ATMA1?

The operating junction temperature range is -55°C to +150°C.

Is the BSZ096N10LS5ATMA1 RoHS compliant?

Yes, the device is RoHS compliant and halogen-free according to IEC61249-2-21.

What is the typical on-resistance of the BSZ096N10LS5ATMA1?

The maximum drain-source on-resistance is 9.6 mΩ at Vgs=10V and Id=20A.

Does the BSZ096N10LS5ATMA1 have logic-level gate drive capability?

Yes, the device has a gate threshold voltage maximum of 2.3V at Id=36µA and a minimum drive voltage of 4.5V for rated on-resistance.

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