BSZ0904NSIATMA1 BSZ0904NSIATMA1 is a 30V N-Channel MOSFET from Infineon Technologies, offering up to 40A continuous drain current with 4mOhm max on-resistance. Surface mount package PG-TSDSON-8-FL.
Mfr Part #:

BSZ0904NSIATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
BSZ0904NSIATMA1 is a 30V N-Channel MOSFET from Infineon Technologies, offering up to 40A continuous drain current with 4mOhm max on-resistance. Surface mount package PG-TSDSON-8-FL.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.35 - $1.43

BSZ0904NSIATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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BSZ0904NSIATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ0904NSIATMA1 Description

Short technical summary and product information.

The BSZ0904NSIATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, utilizing advanced MOSFET technology with an integrated Schottky diode body. It is designed for high-efficiency power conversion and load switching applications.

 

Key electrical specifications include a drain-source voltage rating of 30V, a continuous drain current of 18A at ambient temperature (25°C) and 40A at case temperature. The maximum on-resistance is an ultra-low 4mOhm at a gate drive of 10V and 30A drain current. The gate charge is 11nC maximum at 4.5V, and input capacitance is 1463pF at 15V drain-source voltage. The threshold voltage is 2V maximum at 250µA drain current, with gate drive voltages of 4.5V and 10V for maximum and minimum on-resistance condition.

 

Thermal characteristics include a maximum power dissipation of 2.1W at ambient and 37W at case temperature, with an operating junction temperature range of -55°C to 150°C. These ratings make the device suitable for demanding thermal environments.

 

The MOSFET is available in a surface mount 8-PowerTDFN package (supplier package PG-TSDSON-8-FL), enabling compact PCB layouts. It is RoHS3 compliant and REACH unaffected according to existing database entries, though compliance data is unverified. This component is ideal for DC/DC converters, load switches, and power management solutions requiring high efficiency and small footprint.

BSZ0904NSIATMA1 Quick Information

Product Type: Single N-Channel MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies BSZ0904NSIATMA1 N-Channel MOSFET, 30V, 40A
Subcategory: N-Channel MOSFET

BSZ0904NSIATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSZ0904NSIATMA1 Estimated Pricing

Qty Low High
1+ $1.43 $1.43
10+ $0.90 $0.90
100+ $0.60 $0.60
500+ $0.47 $0.47
1,000+ $0.39 $0.39
5,000+ $0.35 $0.35
10,000+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ0904NSIATMA1 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Maximum continuous drain current of 40A.
  • Ultra-low 4mOhm on-resistance at 10V gate drive.
  • Schottky diode body for fast switching.
  • Surface mount PG-TSDSON-8-FL package.

BSZ0904NSIATMA1 Applications

  • Ideal for DC/DC converter synchronous rectification.
  • Used in load switches for power distribution.
  • Suitable for battery management systems.
  • Designed for point-of-load power supplies.

BSZ0904NSIATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V

What is the package type?

8-PowerTDFN (PG-TSDSON-8-FL)

What is the operating temperature range?

-55°C to 150°C junction temperature

Is this component RoHS compliant?

RoHS3 compliant according to existing database entry

What is the maximum continuous drain current?

18A at 25°C ambient, 40A at 25°C case temperature

What is the maximum on-resistance?

4mOhm at Vgs=10V, Id=30A

What gate drive voltages are recommended?

4.5V for maximum Rds-on and 10V for minimum Rds-on

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