| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,430 pcs
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30430 pcs | On Request | 1 | On Request | On Request | 1824+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The BSZ088N03LSG is an N-Channel enhancement mode MOSFET from Infineon Technologies. It is designed for high-efficiency power conversion with a maximum drain-source voltage of 30V and continuous drain current of 50A at case temperature (Tc). The device features a low on-resistance of 8.8mΩ maximum at 20A drain current and 10V gate drive, enabling reduced conduction losses.
Key electrical characteristics include a gate threshold voltage of 2.2V maximum at 250µA, input capacitance of 1700pF at 15V Vds, and total gate charge of 21nC at 10V. The maximum gate-source voltage rating is ±20V.
The MOSFET is offered in a surface mount PG-TSDSON-8 package (8-PowerTDFN). It can dissipate up to 35W at case temperature and operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
30V.
50A at case temperature (Tc) and 12A at ambient temperature (Ta).
Maximum 8.8mΩ at 20A drain current and 10V gate drive.
-55°C to 150°C junction temperature.
Surface mount PG-TSDSON-8 (8-PowerTDFN).
Yes, it is listed as RoHS3 compliant.
Maximum 2.2V at 250µA drain current.