BSZ084N08NS5ATMA1 N-channel MOSFET with 80V drain-source voltage, 40A continuous drain current, and 8.4mOhm maximum on-resistance. Surface-mount 8-PowerTDFN package.
Mfr Part #:

BSZ084N08NS5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-channel MOSFET with 80V drain-source voltage, 40A continuous drain current, and 8.4mOhm maximum on-resistance. Surface-mount 8-PowerTDFN package.
✓ Total Stock: 60 pcs
$ Price Range: $0.62 - $2.19

BSZ084N08NS5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSZ084N08NS5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ084N08NS5ATMA1 Description

Short technical summary and product information.

BSZ084N08NS5ATMA1 is an N-channel MOSFET from Infineon Technologies, designed for power switching and conversion applications. It supports a maximum drain-source voltage of 80V and a continuous drain current of 40A at case temperature (TC). The device is built with advanced MOSFET (Metal Oxide) technology.

 

Key electrical specifications include a maximum on-resistance of 8.4mOhm at a gate-source voltage of 10V and drain current of 20A, which minimizes conduction losses. The maximum gate charge is 25nC at 10V, and the input capacitance is 1820pF at 40V, making the device well suited for high-frequency switching. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 63W at TC.

 

This MOSFET can be driven with gate voltages of 6V or 10V, and has a maximum gate threshold voltage of 3.8V at 31µA. Its low on-resistance and moderate gate charge make it appropriate for DC-DC converters, load switches, and other power management circuits.

 

The device is offered in a surface-mount 8-PowerTDFN package, with supplier package designation PG-TSDSON-8-FL. This compact, leadless package supports effective heat transfer and is suitable for automated assembly.

BSZ084N08NS5ATMA1 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel MOSFET 80V 40A
Subcategory: Single MOSFET

BSZ084N08NS5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSZ084N08NS5ATMA1 Estimated Pricing

Qty Low High
1+ $2.19 $2.19
10+ $1.27 $1.27
100+ $0.91 $0.91
500+ $0.75 $0.75
1,000+ $0.66 $0.66
2,500+ $0.65 $0.65
5,000+ $0.62 $0.62

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ084N08NS5ATMA1 Features

  • N-channel MOSFET rated for 80V drain-source voltage.
  • Handles 40A continuous drain current at TC.
  • Low 8.4mOhm maximum on-resistance at 10V.
  • Maximum gate charge of 25nC at 10V.
  • Available in surface-mount 8-PowerTDFN package.

BSZ084N08NS5ATMA1 Applications

  • Suitable for DC-DC converter circuits.
  • Ideal for power supply switching stages.
  • Used in motor control applications.
  • Works in battery management systems.

BSZ084N08NS5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSZ084N08NS5ATMA1?

The maximum drain-source voltage is 80V.

What is the package type of the BSZ084N08NS5ATMA1?

It is available in a surface-mount 8-PowerTDFN package, with supplier device package PG-TSDSON-8-FL.

What is the operating temperature range?

The junction operating temperature range is -55°C to +150°C.

Is the BSZ084N08NS5ATMA1 RoHS compliant?

It is listed as RoHS3 compliant in the product data.

What is the maximum continuous drain current?

The maximum continuous drain current is 40A at case temperature.

What is the on-resistance of the device?

The maximum on-resistance is 8.4mOhm at Vgs=10V and Id=20A.

What is the gate charge specification?

The maximum gate charge is 25nC at Vgs=10V.

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