BSZ065N06LS5ATMA1 N-Channel MOSFET from Infineon Technologies, rated for 60V drain-source voltage and 65A continuous drain current. Features a low 6.5 mOhm on-resistance.
Mfr Part #:

BSZ065N06LS5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies, rated for 60V drain-source voltage and 65A continuous drain current. Features a low 6.5 mOhm on-resistance.
✓ Total Stock: 31,020 pcs
$ Price Range: $0.50 - $2.01

BSZ065N06LS5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSZ065N06LS5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ065N06LS5ATMA1 Description

Short technical summary and product information.

The BSZ065N06LS5ATMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS power transistor family. It is designed for high-performance switched-mode power supplies (SMPS) and synchronous rectification applications.

 

Key electrical specifications include a drain-to-source voltage (Vds) of 60V, a continuous drain current (Id) of 65A at 25°C case temperature, and a maximum on-resistance (Rds(on)) of 6.5 mOhm at Vgs=10V. The device is 100% avalanche tested with a maximum avalanche energy (EAS) of 38 mJ. It features a typical gate charge (Qg) of 10 nC from 0V to 4.5V and a typical output charge (Qoss) of 19 nC.

 

The MOSFET is housed in a surface-mount PG-TSDSON-8-FL package (also known as 8-PowerTDFN). It is qualified according to JEDEC standards and is RoHS compliant with halogen-free construction.

BSZ065N06LS5ATMA1 Quick Information

Product Type: MOSFET
Series: BSZ065N06LS5
Canonical Name: Infineon Technologies BSZ065N06LS5ATMA1 N-Channel MOSFET
Subcategory: Single MOSFET

BSZ065N06LS5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSZ065N06LS5ATMA1 Estimated Pricing

Qty Low High
1+ $2.01 $2.01
10+ $1.26 $1.26
100+ $0.83 $0.83
500+ $0.66 $0.66
1,000+ $0.59 $0.59
2,500+ $0.54 $0.54
5,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ065N06LS5ATMA1 Features

  • N-channel OptiMOS power MOSFET.
  • Rated for 60V drain-source voltage.
  • Low 6.5 mOhm on-resistance.
  • 100% avalanche tested design.
  • RoHS compliant and halogen-free.

BSZ065N06LS5ATMA1 Applications

  • High-performance SMPS circuits.
  • Synchronous rectification applications.
  • DC-DC converter designs.
  • Power management in computing.

BSZ065N06LS5ATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSZ065N06LS5ATMA1?

The drain-to-source voltage (Vdss) is 60 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 65 A at Tc=25°C with VGS=10V, and 41 A at Tc=100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 6.5 mOhm at ID=20A and VGS=10V.

What package is the BSZ065N06LS5ATMA1 available in?

It is available in a surface-mount PG-TSDSON-8-FL package (8-PowerTDFN).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSZ065N06LS5ATMA1 RoHS compliant?

Yes, it is RoHS compliant with Pb-free lead plating.

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