| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,236 pcs
|
1236 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSZ063N04LS6 is an N-channel MOSFET designed for industrial applications. It features a drain-source voltage rating of up to 40V and has undergone rigorous qualification testing according to JEDEC standards.
The device has passed various electrical stress tests including High Temperature Reverse Bias (HTRB), High Temperature Gate Bias (HTGB), and High Humidity High Temperature Reverse Bias (H3TRB). Mechanical and environmental stress tests such as Temperature Cycling, Autoclave, and Resistance to Solder Heat were also successfully completed.
Packaged in a PG-TSDSON-8 surface-mount configuration, the BSZ063N04LS6 is suitable for applications requiring reliable performance under demanding conditions. Its qualification status indicates suitability for industrial use cases where quality and reliability are paramount.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for the BSZ063N04LS6 is 40V.
The BSZ063N04LS6 MOSFET is supplied in the PG-TSDSON-8 package.
The Moisture Sensitivity Level (MSL) for the BSZ063N04LS6 is 1 Unlimited.
The BSZ063N04LS6 is RoHS3 Compliant.
The REACH status for the BSZ063N04LS6 is Unaffected.
Yes, the BSZ063N04LS6 has passed pre-conditioning testing with MSL and 3x reflow at 260°C.
The BSZ063N04LS6 passed the High Temperature Reverse Bias test conducted at Ta = 150°C/175°C for 1000 hours.