| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon Technologies BSZ050N03MSGATMA1 is an N-Channel enhancement mode power MOSFET from the OptiMOS 3M-Series. It is designed for high efficiency power conversion applications, particularly those optimized for 5V gate drive operation such as notebook, VGA, and point-of-load converters.
Key electrical specifications include a drain-source voltage (Vdss) of 30V, continuous drain current of 15A at 25°C ambient temperature (40A at case temperature), and a maximum drain-source on-resistance of just 4.5mOhm at 10V gate drive. The device is 100% avalanche tested, with a single pulse avalanche energy rating of 70mJ. Gate charge is 46nC at 10V, and input capacitance is 3600pF at 15V drain-source voltage.
The MOSFET is housed in a surface-mount PG-TSDSON-8 package (8-PowerTDFN), offering superior thermal resistance for efficient heat dissipation. It is qualified according to JEDEC standards and features Pb-free plating, RoHS compliance, and is halogen-free per IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.40 | $1.40 |
| 10+ | $0.88 | $0.88 |
| 50+ | $0.65 | $0.65 |
| 100+ | $0.58 | $0.58 |
| 500+ | $0.45 | $0.45 |
| 5,000+ | $0.33 | $0.33 |
| 15,000+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
The continuous drain current is 15A at 25°C ambient temperature and 40A at 25°C case temperature.
The maximum on-resistance is 4.5mOhm at Vgs=10V and 5.7mOhm at Vgs=4.5V.
It is available in a surface-mount PG-TSDSON-8 (8-PowerTDFN) package.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states it is RoHS compliant with Pb-free plating.
The maximum gate charge (Qg) is 46nC at Vgs=10V.