Mfr Part #:

BSZ050N03LSGATMA1

N-Channel MOSFET with 30V drain-source voltage rating. Supports 16A continuous drain current at 25°C ambient and 40A at case temperature.

✓ Total Stock: 21,020 pcs

$ Price Range: $0.31 - $1.32

BSZ050N03LSGATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	21,020 pcs On Request	21020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSZ050N03LSGATMA1 Description

Short technical summary and product information.

The BSZ050N03LSGATMA1 is a single N-Channel MOSFET from Infineon Technologies, utilizing MOSFET (Metal Oxide) technology. It is designed for surface mount applications requiring efficient power switching.

Key electrical characteristics include a drain-source voltage (Vdss) of 30V, continuous drain current of 16A at ambient temperature (Ta=25°C) and 40A at case temperature (Tc=25°C). The device features a low on-resistance of 5mOhm maximum at 20A and 10V gate drive. Gate threshold voltage is 2.2V maximum at 250µA. Gate charge is 35nC maximum at 10V, and input capacitance is 2800pF maximum at 15V drain-source voltage.

The MOSFET is housed in an 8-PowerTDFN package (PG-TSDSON-8 supplier device package) for surface mount assembly. It has a maximum power dissipation of 2.1W at ambient temperature and 50W at case temperature. Operating junction temperature range is -55°C to 150°C.

BSZ050N03LSGATMA1 Quick Information

Product Type: MOSFET

Series: OptiMOS 3

Canonical Name: BSZ050N03LSGATMA1 N-Channel MOSFET

Subcategory: N-Channel MOSFET

BSZ050N03LSGATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSZ050N03LSGATMA1 Estimated Pricing

Qty	Low	High
1+	$1.32	$1.32
10+	$0.64	$0.64
100+	$0.44	$0.44
500+	$0.36	$0.36
1,000+	$0.31	$0.31
2,500+	$0.31	$0.31
5,000+	$0.31	$0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ050N03LSGATMA1 Features

30V drain-source voltage rating.
16A continuous drain current at 25°C.
40A continuous drain current at case.
Low 5mOhm on-resistance at 10V gate.
Surface mount 8-PowerTDFN package.

BSZ050N03LSGATMA1 Applications

Power management in portable electronics.
DC-DC converter switching applications.
Load switch for low voltage rails.
Battery protection circuits.

BSZ050N03LSGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of BSZ050N03LSGATMA1?

30V.

What is the maximum continuous drain current?

16A at ambient temperature (Ta=25°C) and 40A at case temperature (Tc=25°C).

What is the on-resistance of this MOSFET?

5mOhm maximum at 20A drain current and 10V gate voltage.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is the BSZ050N03LSGATMA1 available in?

Surface mount 8-PowerTDFN package (PG-TSDSON-8).

Is the device RoHS compliant?

RoHS3 Compliant (unverified compliance).

What is the gate charge of this MOSFET?

35nC maximum at 10V gate voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	16 A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 15 V
Lead Style	Smd
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.1W (Ta)
Rds On (Max) @ Id, Vgs	5 mOhm @ 20A, 10V
Supplier Device Package	PG-TSDSON-8
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 250µA