BSZ0506NSATMA1 N-Channel 30V 40A (Tc) MOSFET from Infineon Technologies in a surface mount PG-TSDSON-8-FL package.
Mfr Part #:

BSZ0506NSATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel 30V 40A (Tc) MOSFET from Infineon Technologies in a surface mount PG-TSDSON-8-FL package.
✓ Total Stock: 2,000 pcs
$ Price Range: $0.34 - $1.61

BSZ0506NSATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

BSZ0506NSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ0506NSATMA1 Description

Short technical summary and product information.

The BSZ0506NSATMA1 is an N-Channel enhancement mode MOSFET from Infineon Technologies, built with MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30 V, a continuous drain current of 40 A at Tc=25°C (15 A at Ta=25°C), and a maximum on-resistance of 4.4 mOhm at 20 A and 10 V gate drive. The device features a maximum gate charge of 15 nC at 10 V and an input capacitance of 950 pF at 15 V drain-source voltage.

 

The MOSFET is housed in an 8-PowerTDFN surface mount package (supplier device package PG-TSDSON-8-FL) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 27 W at case temperature 25°C.

BSZ0506NSATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies BSZ0506NSATMA1 N-Channel 30V 40A MOSFET
Subcategory: Single N-Channel

BSZ0506NSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSZ0506NSATMA1 Estimated Pricing

Qty Low High
1+ $1.61 $1.61
10+ $0.87 $0.87
100+ $0.58 $0.58
500+ $0.46 $0.46
1,000+ $0.41 $0.41
2,500+ $0.39 $0.39
5,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ0506NSATMA1 Features

  • N-Channel 30V drain-source voltage MOSFET.
  • 40A continuous drain current at case temperature.
  • 4.4mOhm maximum on-resistance at 20A/10V.
  • Surface mount PG-TSDSON-8-FL package.
  • -55°C to 150°C operating junction temperature.

BSZ0506NSATMA1 Applications

  • Used in DC-DC converter power stages.
  • Suitable for load switch applications.
  • Ideal for battery management circuits.
  • Used in low-voltage motor control.

BSZ0506NSATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSZ0506NSATMA1?

The maximum drain-to-source voltage (Vdss) is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 40 A at Tc=25°C and 15 A at Ta=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds on) is 4.4 mOhm at Id=20A and Vgs=10V.

What package does the BSZ0506NSATMA1 come in?

It is supplied in an 8-PowerTDFN surface mount package (PG-TSDSON-8-FL).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSZ0506NSATMA1 RoHS compliant?

The part is listed as RoHS3 Compliant, but this information is unverified.

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