| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSZ042N06NSATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS family, designed for high-performance switching applications. It features a drain-source voltage of 60V and a maximum continuous drain current of 98A at a case temperature of 25°C (derated to 62A at 100°C and 17A at 25°C ambient). The device delivers a typical gate charge of 27nC at 10V and an input capacitance of 2000pF at 30V, enabling efficient switching in synchronous rectification and SMPS topologies.
The MOSFET is built with advanced OptiMOS technology, providing low on-resistance of 4.2mOhm maximum at 10V gate drive. It is 100% avalanche tested with a maximum avalanche energy of 130mJ. The device is housed in a compact PG-TSDSON-8-FL surface-mount package (8-PowerTDFN compatible), offering superior thermal resistance and a small footprint for space-constrained designs.
Compliance includes RoHS3, halogen-free per IEC61249-2-21, and Pb-free lead plating. The operating junction temperature range is -55°C to 150°C, making it suitable for industrial and automotive environments. The part is qualified to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.07 | $2.07 |
| 10+ | $1.32 | $1.32 |
| 100+ | $0.89 | $0.89 |
| 500+ | $0.72 | $0.72 |
| 1,000+ | $0.65 | $0.65 |
| 2,500+ | $0.61 | $0.61 |
| 5,000+ | $0.57 | $0.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 60V.
It is supplied in a PG-TSDSON-8-FL surface-mount package (also known as 8-PowerTDFN).
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and also halogen-free per IEC61249-2-21 with Pb-free lead plating.
The maximum drain-to-source on-resistance is 4.2mOhm at Id=20A and Vgs=10V.
The maximum gate charge (Qg) is 27nC at Vgs=10V.