| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,030 pcs
|
5030 pcs | On Request | 1 | On Request | On Request | 1424+ | On Request | On Request | |
|
1,011 pcs
|
1011 pcs | On Request | 1 | On Request | On Request | 1516+ | On Request | On Request |
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The Infineon BSZ036NE2LS is an N-Channel MOSFET belonging to the OptiMOS family. It offers a drain-source breakdown voltage of 25V and a continuous drain current of 50A. The device has a low on-resistance of 5 mOhms at a gate-source voltage of 10V.
With a gate-source threshold voltage of 1.2V, this MOSFET operates in enhancement mode. It is designed for a wide temperature range, from -55C to +150C, and has a power dissipation rating of 69W.
The BSZ036NE2LS is packaged in a TDSON-8 surface-mount case. Its dimensions are 3.3mm in length and width, with a height of 1.1mm. The component is supplied on a reel, with a factory pack quantity of 5000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.26 | $1.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 50A.
The drain-source breakdown voltage is 25V.
The typical drain-source on-resistance is 5 mOhms.
The gate-source threshold voltage is 1.2V.
The operating temperature range is from -55C to +150C.
The BSZ036NE2LS is supplied in a TDSON-8 package.
The gate charge is 22 nC.