BSZ034N04LSATMA1 N-Channel MOSFET with 40V drain-source voltage and 19A/40A continuous current rating. Low on-resistance of 3.4mOhm for efficient power switching.
Mfr Part #:

BSZ034N04LSATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 40V drain-source voltage and 19A/40A continuous current rating. Low on-resistance of 3.4mOhm for efficient power switching.
✓ Total Stock: 21,020 pcs
$ Price Range: $0.39 - $1.91

BSZ034N04LSATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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21,020 pcs
21020 pcs On Request 1 On Request On Request On Request On Request On Request

BSZ034N04LSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSZ034N04LSATMA1 Description

Short technical summary and product information.

The BSZ034N04LSATMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, designed for power management applications. It features a drain-source voltage rating of 40V and a continuous drain current of 19A at ambient temperature (25°C) or 40A at case temperature (25°C). The device employs advanced MOSFET technology to achieve a low maximum on-resistance of 3.4 mOhm at 20A and 10V gate drive, reducing conduction losses.

 

Key electrical characteristics include a maximum gate charge of 25 nC at 10V, and an input capacitance of 1800 pF at 20V. The gate threshold voltage is 2V maximum at 250 µA, with recommended drive voltages of 4.5V for optimized on-resistance and 10V for full enhancement. Power dissipation is rated at 2.1W (ambient) and 52W (case temperature).

 

The MOSFET is housed in a surface mount 8-PowerTDFN package (PG-TSDSON-8-FL), suitable for compact PCB layouts. It is supplied in tape and reel packaging for automated assembly. The operating junction temperature range is -55°C to 150°C.

 

Compliance information indicates RoHS3 compliance, MSL Level 1, and REACH unaffected, though these are unverified and should be confirmed from official sources.

BSZ034N04LSATMA1 Quick Information

Product Type: MOSFET - Single
Canonical Name: BSZ034N04LSATMA1 N-Channel MOSFET 40V 19A/40A TSDSON
Subcategory: N-Channel MOSFET

BSZ034N04LSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSZ034N04LSATMA1 Estimated Pricing

Qty Low High
1+ $1.91 $1.91
10+ $1.18 $1.18
100+ $0.78 $0.78
500+ $0.61 $0.61
1,000+ $0.52 $0.52
2,500+ $0.46 $0.46
5,000+ $0.39 $0.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ034N04LSATMA1 Features

  • 40V drain-source voltage rating.
  • Low on-resistance of 3.4 mOhm.
  • High current capability up to 40A.
  • Surface mount TSDSON package.

BSZ034N04LSATMA1 Applications

  • Power management in DC-DC converters.
  • Load switching for battery-powered devices.
  • Motor control in low-voltage applications.

BSZ034N04LSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What package does this MOSFET come in?

8-PowerTDFN (PG-TSDSON-8-FL).

What is the operating temperature range?

-55°C to 150°C.

Is this component RoHS compliant?

It is marked as RoHS3 Compliant, but this is unverified.

What is the drain-source on-resistance?

Maximum 3.4 mOhm at 20A and 10V gate drive.

What is the maximum continuous drain current?

19A at ambient temperature (25°C) and 40A at case temperature (25°C).

What is the gate charge?

Maximum 25 nC at 10V gate voltage.

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