| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) |
The BSZ028N04LSATMA1 is a 40V N-Channel enhancement mode power MOSFET from Infineon Technologies' OptiMOS family. It is designed for high-performance switching applications such as synchronous rectification in SMPS. The device features a maximum drain-source voltage of 40V and a continuous drain current of 114A at TC=25°C (VGS=10V). At TA=25°C, the current is derated to 21A. The typical on-resistance is 2.8mOhm at VGS=10V, with a maximum gate charge of 32nC at 10V. The input capacitance is 2300pF at VDS=20V.
The MOSFET is avalanche tested with a single-pulse avalanche energy rating of 100mJ. It is capable of pulsed drain currents up to 456A. The device operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 63W at TC=25°C and 2.1W at TA=25°C.
The BSZ028N04LSATMA1 is housed in a PG-TSDSON-8 FL package (8-PowerTDFN) with surface mount termination. The package is halogen-free and RoHS compliant. It offers enhanced solder joint reliability due to an enlarged source interconnection. This component is suitable for use in high-efficiency power conversion circuits where low conduction and switching losses are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.79 | $1.79 |
| 10+ | $1.03 | $1.03 |
| 100+ | $0.72 | $0.72 |
| 500+ | $0.59 | $0.59 |
| 1,000+ | $0.51 | $0.51 |
| 2,500+ | $0.49 | $0.49 |
| 5,000+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 40V.
At TC=25°C with VGS=10V, the maximum continuous drain current is 114A. It derates to 72A at TC=100°C and 21A at TA=25°C.
The maximum on-resistance is 2.8mOhm at VGS=10V and ID=20A.
The maximum gate charge is 32nC when VGS is 10V.
The junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant as verified from the datasheet.
It is available in a PG-TSDSON-8 FL package (8-PowerTDFN).