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BSZ018NE2LSATMA1 The Infineon Technologies BSZ018NE2LSATMA1 is an N-Channel MOSFET with a 25V drain-source voltage and 23A continuous drain current at 25°C. It is designed for surface mounting.
Mfr Part #:

BSZ018NE2LSATMA1

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon Technologies BSZ018NE2LSATMA1 is an N-Channel MOSFET with a 25V drain-source voltage and 23A continuous drain current at 25°C. It is designed for surface mounting.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.88

BSZ018NE2LSATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Seba Components ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSZ018NE2LSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Drain to Source Voltage (Vdss)
FET Type
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Storage Temperature
Tape & Reel
Technology
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BSZ018NE2LSATMA1 Description

Short technical summary and product information.

The Infineon Technologies BSZ018NE2LSATMA1 is an N-Channel MOSFET belonging to the OptiMOS™ series. It features a drain-to-source voltage of 25V and can handle a continuous drain current of 23A at an ambient temperature of 25°C, or 40A at case temperature.

 

This MOSFET utilizes Metal Oxide technology and is housed in a PG-TSDSON-8-FL package, designed for surface mounting. It offers a power dissipation of 2.1W at ambient temperature and 69W at case temperature.

 

The BSZ018NE2LSATMA1 is suitable for various electronic applications requiring efficient switching and power management. Its robust design and specifications make it a reliable component for demanding circuits.

BSZ018NE2LSATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS™
Canonical Name: Infineon Technologies BSZ018NE2LSATMA1 N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

BSZ018NE2LSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSZ018NE2LSATMA1 Estimated Pricing

Qty Low High
1+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSZ018NE2LSATMA1 Features

  • N-Channel MOSFET with 25V drain voltage.
  • Continuous drain current of 23A at 25°C.
  • Surface mount package for easy installation.
  • Power dissipation of 2.1W at ambient temperature.
  • Technology based on Metal Oxide Semiconductor.

BSZ018NE2LSATMA1 Applications

  • Suitable for high-current switching applications.
  • Ideal for power supply and motor control circuits.
  • Used in compact, surface-mount electronic devices.
  • Applicable in industrial automation systems.

BSZ018NE2LSATMA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the BSZ018NE2LSATMA1?

The drain-source voltage is 25 V.

What is the continuous drain current of the BSZ018NE2LSATMA1 at 25°C?

The continuous drain current at 25°C is 23A (Ta) and 40A (Tc).

What is the package type for the BSZ018NE2LSATMA1?

The package is PG-TSDSON-8-FL and it is a surface mount device.

What is the RoHS status of the BSZ018NE2LSATMA1?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

What is the REACH status for the BSZ018NE2LSATMA1?

The REACH status is REACH Unaffected.

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