| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
750 pcs
|
750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The Infineon BSZ011NE2LS5I is an N-channel OptiMOSTM5 power transistor with a 25V drain-source voltage rating. It is optimized for high-performance buck converters and includes a monolithic integrated Schottky-like diode.
Key electrical specifications include a very low on-resistance of 1.1 mΩ at VGS=4.5V and a maximum continuous drain current of 202A at TC=25°C with VGS=10V. The device is 100% avalanche tested, ensuring reliability.
Packaged in a TSDSON-8 surface-mount package, this MOSFET is suitable for various industrial applications. It is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 25V.
The maximum on-resistance (RDS(on)) is 1.1 mΩ at a gate-source voltage (VGS) of 4.5V.
The continuous drain current (ID) is rated at 202A when VGS is 10V and the case temperature (TC) is 25°C.
The BSZ011NE2LS5I is supplied in a PG-TSDSON-8 package.
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the component is Halogen-free.