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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SESCOCEM BSY79 is a versatile NPN small signal transistor housed in a TO-18 case. It is engineered for amplification and switching applications, offering a collector-emitter breakdown voltage (VCEO) of 45V and a maximum continuous collector current (IC) of 1000mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 10 at 100mA and 10V, a maximum collector-emitter saturation voltage (VCE(SAT)) of 1V at 100mA and 1mA, and a transition frequency (fT) of 180MHz. The transistor also exhibits a maximum noise figure (NF) of 7dB and an output capacitance (COB) of 10pF.
With a minimum emitter-base breakdown voltage (VEBO) of 5V and a maximum collector-base breakdown voltage (VCBO) of 45V, the BSY79 provides reliable performance. It has a maximum collector cut-off current (ICBO) of 0.1µA. The component is supplied in a TO-18 package, suitable for through-hole mounting.
This transistor is suitable for various electronic circuits requiring signal amplification or switching functionalities. Its specifications make it a viable option for general-purpose amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BSY79 transistor has a collector-emitter breakdown voltage (VCEO) of 45V and a collector-base breakdown voltage (VCBO) of 45V.
The maximum continuous collector current (IC) for the BSY79 is 1000mA.
The minimum DC current gain (hFE) for the BSY79 is 10, measured at 100mA collector current and 10V collector-emitter voltage.
The transition frequency (fT) of the BSY79 is a minimum of 180MHz.
The BSY79 is supplied in a TO-18 case.