| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSY56 is a silicon planar epitaxial NPN transistor manufactured by MTC, housed in a Jedec TO-39 metal case. It is intended for use in high-performance amplifier, oscillator, and switching circuits.
Key electrical characteristics include a maximum Collector-Emitter Voltage of 80V and a maximum Collector Current of 500mA. The device offers a range of DC Current Gain (hFE) values depending on the specific BSY55 or BSY56 variant and operating conditions, with values typically ranging from 20 to 300.
Thermal performance is supported by a Junction-to-Case thermal resistance of 58°C/W and a Junction-to-Ambient thermal resistance of 220°C/W. The transistor can dissipate up to 0.8W at 25°C ambient temperature or 3W at 25°C case temperature.
Packaged in a TO-39 metal case, the BSY56 is suitable for through-hole mounting. Its specifications make it a versatile component for various general-purpose amplification and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the BSY56 is 80V.
The maximum collector current for the BSY56 is 500mA.
The BSY56 transistor is supplied in a TO-39 metal case.
The junction-to-case thermal resistance of the BSY56 is 58°C/W.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.