| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Operating Temperature | |
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| Tape & Reel |
The BSV80 is an N-Channel Field-Effect Transistor (FET) from NXP Semiconductors. This component is designed for electronic applications requiring specific voltage and resistance characteristics. It offers a minimum breakdown voltage of 40V and a minimum drain-source resistance of 60Ω. The maximum power dissipation is rated at 350mW, and it can operate at temperatures up to 175°C.
With 3 terminals, the BSV80 is suitable for integration into various circuit designs. Its specifications suggest use in applications where precise current control or switching is necessary. The component's operating temperature range makes it robust for demanding environments.
This FET is part of the broader category of discrete semiconductor products, specifically within current regulation diodes and transistors. Its characteristics are important for engineers selecting components for power management, signal amplification, or switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the BSV80 FET is 40V.
The minimum drain-source resistance of the BSV80 is 60Ω.
The BSV80 can operate at a maximum temperature of 175°C.
The maximum power dissipation for the BSV80 is 350mW.
The BSV80 has 3 terminals.