BSV52LT1G BSV52LT1G is an NPN bipolar switching transistor from onsemi with a maximum collector-emitter voltage of 12V and continuous collector current of 100mA.
Mfr Part #:

BSV52LT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
BSV52LT1G is an NPN bipolar switching transistor from onsemi with a maximum collector-emitter voltage of 12V and continuous collector current of 100mA.
Total Stock: 6,430 pcs
$ Price Range: $0.08 - $0.31

BSV52LT1G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,835 pcs
5835 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
595 pcs
595 pcs On Request 1 On Request On Request On Request On Request On Request

BSV52LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum @ Ic=1 mA, Vce=1 V)
DC Current Gain (Minimum @ Ic=50 mA, Vce=1 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Input Capacitance (Cibo) (Max @ 1V, 1MHz)
Medical Grade
Mounting Type
Operating Temperature
Output Capacitance (Cobo) (Max @ 5V, 1MHz)
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Standard Package Quantity
Storage Temperature
Storage Time (ts) (Max @ 10mA)
Supplier Device Package
Tape & Reel
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Transistor Type
Turn-Off Time (toff) (Max @ 10mA, 3mA)
Turn-On Time (ton) (Max @ 1.5V, 10mA, 3mA)
Vbe Saturation (Maximum @ IC=50 mA, IB=5 mA)
Vbe Saturation (Minimum/Maximum @ IC=10 mA, IB=1 mA)
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Maximum @ IC=10 mA, IB=1 mA)
Vce Saturation (Maximum @ IC=10 mA, IB=300 µA)
Voltage

BSV52LT1G Description

Short technical summary and product information.

The BSV52LT1G is an NPN silicon switching transistor designed for general-purpose switching applications. It features a collector-emitter voltage rating of 12V and a continuous collector current of 100mA. Total power dissipation is 225mW on an FR-5 board and 300mW on an alumina substrate. The device offers a DC current gain (hFE) range of 40 to 120 at 10mA test conditions, and a minimum transition frequency of 400MHz. Switching performance is characterized by typical turn-on and turn-off times of 12ns and 18ns respectively. The transistor is housed in a surface-mount SOT-23-3 package, making it suitable for compact PCB designs. The device is Pb-free, halogen free/BFR free, and RoHS compliant.

BSV52LT1G Quick Information

Product Type: NPN Bipolar Junction Transistor
Canonical Name: NPN Bipolar Junction Transistor 12V 100mA SOT-23-3
Subcategory: NPN Single

BSV52LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSV52LT1G Estimated Pricing

Qty Low High
1+ $0.31 $0.31
10+ $0.19 $0.19
100+ $0.12 $0.12
500+ $0.09 $0.09
1,000+ $0.08 $0.08
3,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSV52LT1G Features

  • NPN silicon switching transistor for low power.
  • Maximum collector-emitter voltage rating of 12V.
  • Continuous collector current rating of 100mA.
  • Surface-mount SOT-23-3 compact package.
  • RoHS compliant and halogen free.

BSV52LT1G Applications

  • General purpose low power switching circuits.
  • High speed switching up to 400MHz.
  • Portable and battery-powered electronics.
  • Signal amplification and interface circuits.

BSV52LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BSV52LT1G?

The maximum collector-emitter voltage is 12V.

What is the continuous collector current rating?

The maximum continuous collector current is 100mA.

What package does the BSV52LT1G come in?

The device is available in a SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

Is the BSV52LT1G RoHS compliant?

Yes, the device is RoHS compliant and also Pb-free, halogen free/BFR free.

What is the DC current gain (hFE) at 10mA?

At IC=10mA and VCE=1V, the DC current gain ranges from 40 to 120.

What is the transition frequency of the BSV52LT1G?

The minimum current-gain-bandwidth product is 400MHz at IC=10mA and VCE=10V.

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