Mfr Part #:

BSV52LT1G

BSV52LT1G is an NPN bipolar switching transistor from onsemi with a maximum collector-emitter voltage of 12V and continuous collector current of 100mA.

✓ Total Stock: 6,430 pcs

$ Price Range: $0.08 - $0.31

BSV52LT1G Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	5,835 pcs On Request	5835 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	595 pcs On Request	595 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSV52LT1G Description

Short technical summary and product information.

The BSV52LT1G is an NPN silicon switching transistor designed for general-purpose switching applications. It features a collector-emitter voltage rating of 12V and a continuous collector current of 100mA. Total power dissipation is 225mW on an FR-5 board and 300mW on an alumina substrate. The device offers a DC current gain (hFE) range of 40 to 120 at 10mA test conditions, and a minimum transition frequency of 400MHz. Switching performance is characterized by typical turn-on and turn-off times of 12ns and 18ns respectively. The transistor is housed in a surface-mount SOT-23-3 package, making it suitable for compact PCB designs. The device is Pb-free, halogen free/BFR free, and RoHS compliant.

BSV52LT1G Quick Information

Product Type: NPN Bipolar Junction Transistor

Canonical Name: NPN Bipolar Junction Transistor 12V 100mA SOT-23-3

Subcategory: NPN Single

BSV52LT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BSV52LT1G Estimated Pricing

Qty	Low	High
1+	$0.31	$0.31
10+	$0.19	$0.19
100+	$0.12	$0.12
500+	$0.09	$0.09
1,000+	$0.08	$0.08
3,000+	$0.08	$0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSV52LT1G Features

NPN silicon switching transistor for low power.
Maximum collector-emitter voltage rating of 12V.
Continuous collector current rating of 100mA.
Surface-mount SOT-23-3 compact package.
RoHS compliant and halogen free.

BSV52LT1G Applications

General purpose low power switching circuits.
High speed switching up to 400MHz.
Portable and battery-powered electronics.
Signal amplification and interface circuits.

BSV52LT1G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage (VCEO) of the BSV52LT1G?

The maximum collector-emitter voltage is 12V.

What is the continuous collector current rating?

The maximum continuous collector current is 100mA.

What package does the BSV52LT1G come in?

The device is available in a SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

Is the BSV52LT1G RoHS compliant?

Yes, the device is RoHS compliant and also Pb-free, halogen free/BFR free.

What is the DC current gain (hFE) at 10mA?

At IC=10mA and VCE=1V, the DC current gain ranges from 40 to 120.

What is the transition frequency of the BSV52LT1G?

The minimum current-gain-bandwidth product is 400MHz at IC=10mA and VCE=10V.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	On Semiconductor
Current	100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 ~ 120
Frequency	400 MHz
Halogen Free	Yes
Medical Grade	Yes
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power	225 mW
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	SOT-23-3 (TO-236)
Tape & Reel	Tape & Reel
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage	12 V