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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,835 pcs
|
5835 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
595 pcs
|
595 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ Ic=1 mA, Vce=1 V) | |
| DC Current Gain (Minimum @ Ic=50 mA, Vce=1 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Input Capacitance (Cibo) (Max @ 1V, 1MHz) | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cobo) (Max @ 5V, 1MHz) | |
| Power | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Time (ts) (Max @ 10mA) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Transistor Type | |
| Turn-Off Time (toff) (Max @ 10mA, 3mA) | |
| Turn-On Time (ton) (Max @ 1.5V, 10mA, 3mA) | |
| Vbe Saturation (Maximum @ IC=50 mA, IB=5 mA) | |
| Vbe Saturation (Minimum/Maximum @ IC=10 mA, IB=1 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IC=10 mA, IB=1 mA) | |
| Vce Saturation (Maximum @ IC=10 mA, IB=300 µA) | |
| Voltage |
The BSV52LT1G is an NPN silicon switching transistor designed for general-purpose switching applications. It features a collector-emitter voltage rating of 12V and a continuous collector current of 100mA. Total power dissipation is 225mW on an FR-5 board and 300mW on an alumina substrate. The device offers a DC current gain (hFE) range of 40 to 120 at 10mA test conditions, and a minimum transition frequency of 400MHz. Switching performance is characterized by typical turn-on and turn-off times of 12ns and 18ns respectively. The transistor is housed in a surface-mount SOT-23-3 package, making it suitable for compact PCB designs. The device is Pb-free, halogen free/BFR free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.31 | $0.31 |
| 10+ | $0.19 | $0.19 |
| 100+ | $0.12 | $0.12 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.08 | $0.08 |
| 3,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 12V.
The maximum continuous collector current is 100mA.
The device is available in a SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59.
The junction and storage temperature range is -55°C to +150°C.
Yes, the device is RoHS compliant and also Pb-free, halogen free/BFR free.
At IC=10mA and VCE=1V, the DC current gain ranges from 40 to 120.
The minimum current-gain-bandwidth product is 400MHz at IC=10mA and VCE=10V.