| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,509 pcs
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2509 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BSV52 is an NPN switching transistor housed in a compact SOT23 plastic package. This component is engineered for high-speed saturated switching applications, making it particularly suitable for portable equipment.
Key electrical characteristics include a low collector current capability of up to 100 mA and a low collector-emitter voltage rating of 12 V. The transistor also features a collector-base voltage of 20 V and an emitter-base voltage of 5 V. It can handle peak collector currents of up to 200 mA and peak base currents of 100 mA.
With a total power dissipation of 250 mW at an ambient temperature of 25 °C, the BSV52 operates within a wide temperature range from -65 °C to +150 °C. The thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 printed-circuit board.
The BSV52 is designed for surface mount applications, offering a convenient solution for compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BSV52 is available in a SOT23 surface-mount package.
The operating ambient temperature range is -65 to +150 °C.
The maximum DC collector current is 100 mA, with a peak of 200 mA.
The maximum collector-emitter voltage (open base) is 12 V.
The total power dissipation is 250 mW at 25°C ambient temperature.
The typical thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 PCB.