| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,642 pcs
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2642 pcs | On Request | 1 | On Request | On Request | 1008+ | On Request | On Request |
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The BSV236SP L6327 is a P-Channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS-P family. It is designed for small-signal switching applications requiring low voltage and moderate current. The device features a maximum drain-source voltage of 20V and a continuous drain current of 1.5A at 25°C ambient temperature, derated to 1.2A at 70°C. Pulsed drain current capability is 6A.
On-resistance is typically 131mΩ at 4.5V gate drive and 193mΩ at 2.5V, with maximum values of 175mΩ and 285mΩ respectively. The gate threshold voltage ranges from -0.6V to -1.2V, making it suitable for logic-level drive. The device is avalanche rated with a single pulse energy of 9.5mJ and has a reverse diode dv/dt capability of 6kV/µs. Total gate charge is typically 3.8nC, enabling efficient switching.
The MOSFET is housed in a compact SOT-363 surface-mount package (also known as 6-VSSOP or SC-88), with a supplier package designation of PG-SOT363-PO. It is rated for operation from -55°C to 150°C junction temperature. Maximum power dissipation is 560mW at 25°C ambient.
20V maximum.
Surface-mount SOT-363 (also known as 6-VSSOP, SC-88).
-55°C to 150°C junction temperature.
Yes, it is listed as RoHS3 compliant.
Minimum -0.6V, typical -0.9V, maximum -1.2V at ID=8µA.
Typical 131mΩ, maximum 175mΩ at ID=1.5A.
1.5A at 25°C ambient, derated to 1.2A at 70°C.