DistyParts Icon
BST82 The Nexperia BST82 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is supplied in a subminiature SOT23 surface mount package.
Mfr Part #:

BST82

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The Nexperia BST82 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is supplied in a subminiature SOT23 surface mount package.
✓ Total Stock: 6,106 pcs
$ Price Range: $1.88

BST82 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
4,500 pcs
On Request
4500 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,529 pcs
On Request
1529 pcs On Request 1 On Request On Request 1638+ On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
77 pcs
On Request
77 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BST82 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Package / Case
Storage Temperature
Tape & Reel
View Similar Products (0)

BST82 Description

Short technical summary and product information.

The Nexperia BST82 is an N-channel enhancement mode field-effect transistor designed with TrenchMOS technology. This component offers very fast switching speeds and is logic level compatible, making it suitable for various applications.

 

Key electrical characteristics include a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 190mA at 25°C. The drain-source on-state resistance (RDSon) is typically 5 Ohms when VGS is 5V and ID is 150mA.

 

This transistor is housed in a subminiature SOT23 surface mount package, facilitating compact circuit designs. Its features make it well-suited for applications such as relay drivers, high-speed line drivers, and logic level translators.

BST82 Quick Information

Product Type: N-channel MOSFET
Canonical Name: Nexperia BST82 N-channel enhancement mode field-effect transistor
Subcategory: Special Purpose

BST82 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BST82 Estimated Pricing

Qty Low High
1+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

BST82 Features

  • N-channel enhancement mode MOSFET.
  • Utilizes TrenchMOS technology.
  • Very fast switching speeds.
  • Logic level compatible.
  • Subminiature SOT23 surface mount package.

BST82 Applications

  • Used in power management circuits
  • Suitable for switching applications
  • Ideal for signal amplification
  • Applicable in space-constrained designs

BST82 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BST82?

The maximum drain-source voltage (VDS) for the BST82 is 100V.

What is the continuous drain current of the BST82?

The continuous drain current (ID) for the BST82 is 190mA at 25°C with VGS = 5V.

What is the package type for the BST82?

The BST82 is supplied in a SOT23 package.

What is the typical drain-source on-state resistance (RDSon) for the BST82?

The typical drain-source on-state resistance (RDSon) for the BST82 is 5 Ohms when VGS = 5V and ID = 150 mA.

What are the applications for the BST82?

The BST82 is suitable for relay drivers, high-speed line drivers, and logic level translators.

Home
Account

Categories