| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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828 pcs
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828 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS92 is a P-channel enhancement mode vertical D-MOS transistor manufactured by NXP Semiconductors. It is designed for applications requiring direct interface to C-MOS and TTL logic levels, offering high-speed switching capabilities without secondary breakdown.
Key electrical specifications include a maximum drain-source voltage (VDS) of 240V and a continuous drain current (ID) of 150mA. The drain-source on-state resistance (RDSon) is typically 10 to 20 Ohms at an ID of -100mA and VGS of -10V. The forward transfer admittance (yfs) ranges from 60 to 200 mS under specified conditions.
This transistor is housed in a TO-92 (SOT54) variant package, suitable for through-hole mounting. It has a total power dissipation of 1W at an ambient temperature of 25°C. The operating junction temperature is rated up to 150°C, with storage temperatures ranging from -55°C to +150°C.
Applications for the BSS92 include line current interruption in telephony and use as relay, high-speed, and line transformer drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 240V.
The maximum continuous drain current (ID) is 150mA.
The BSS92 is available in a TO-92 (SOT54 variant) through-hole package.
The maximum operating junction temperature (Tj) is 150°C.
The typical input capacitance (Ciss) is 65pF at VDS = -25V and f = 1MHz.
The maximum drain-source on-state resistance (RDSon) is 20Ω at VGS = -10V and ID = -100mA.
The maximum turn-on time (ton) is 5ns and the maximum turn-off time (toff) is 20ns.