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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS89 from Siemens is an N-channel enhancement mode vertical D-MOS transistor designed for high-speed switching applications. It features a direct interface capability with CMOS and TTL logic levels.
Key electrical specifications include a maximum drain-source voltage of 200V and a continuous drain current of 300mA. The drain-source on-state resistance (RDSon) is specified between 4.5 and 6 Ohms at a gate-source voltage of 10V and a drain current of 400mA. The forward transfer admittance (yfs) ranges from 140 to 350 mS under test conditions of 400mA drain current and 25V drain-source voltage.
This transistor is housed in a TO-92 variant package, suitable for through-hole mounting. Its applications include line current interruption in telephone sets and use as relay, high-speed, and line transformer drivers. The device offers no secondary breakdown, enhancing its reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSS89 is 200V.
The BSS89 transistor has a continuous drain current (ID) of 300mA.
The on-state resistance (RDSon) of the BSS89 at VGS=10V and ID=400mA is between 4.5 and 6 Ohms.
The BSS89 transistor is supplied in a TO-92 variant package.
The BSS89 is used for line current interruption in telephone sets, and as relay, high-speed, and line transformer drivers.