BSS87H6327FTSA1 N-Channel MOSFET, 240V drain-source voltage, 260mA continuous drain current, 6 Ohm on-resistance at 10V gate drive.
Mfr Part #:

BSS87H6327FTSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 240V drain-source voltage, 260mA continuous drain current, 6 Ohm on-resistance at 10V gate drive.
✓ Total Stock: 7,020 pcs
$ Price Range: $0.23 - $0.83

BSS87H6327FTSA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

BSS87H6327FTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSS87H6327FTSA1 Description

Short technical summary and product information.

The BSS87H6327FTSA1 is an N-Channel enhancement mode MOSFET from Infineon Technologies. It features a maximum drain-source voltage of 240V and a continuous drain current of 260mA at ambient temperature. The device offers a typical gate drive voltage range of 4.5V to 10V for optimized on-resistance, with a maximum drain-source on-resistance of 6 Ohm at 260mA and 10V gate bias. The input capacitance is specified at 97 pF at 25V drain-source, and the total gate charge is 5.5 nC at 10V gate-source, indicating moderate switching performance for low-power applications. The maximum gate threshold voltage is 1.8V at 108µA drain current. The part is surface mounted in a TO-243AA (SOT89-4) package with an exposed pad for thermal management, and the supplier device package designation is PG-SOT89-4-2. It is designed for general-purpose switching and amplification in circuits requiring up to 1W power dissipation and a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and rated MSL Level 1 (unlimited) according to manufacturer declarations.

BSS87H6327FTSA1 Quick Information

Product Type: MOSFET
Canonical Name: BSS87H6327FTSA1 N-Channel MOSFET
Subcategory: Single N-Channel

BSS87H6327FTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSS87H6327FTSA1 Estimated Pricing

Qty Low High
1+ $0.83 $0.83
10+ $0.52 $0.52
100+ $0.33 $0.33
500+ $0.30 $0.30
1,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS87H6327FTSA1 Features

  • N-Channel enhancement mode MOSFET.
  • 240V maximum drain-source voltage.
  • 260mA continuous drain current at Ta.
  • 6 Ohm on-resistance at 10V gate drive.
  • Surface mount SOT89-4 package.

BSS87H6327FTSA1 Applications

  • General purpose low-power switching.
  • Load switch for battery-powered devices.
  • Signal level translation interface.
  • DC-DC converter auxiliary circuits.

BSS87H6327FTSA1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of BSS87H6327FTSA1?

240V.

What is the maximum continuous drain current?

260mA at ambient temperature (Ta).

What is the on-resistance?

6 Ohm maximum at Id=260mA and Vgs=10V.

What package does this MOSFET come in?

TO-243AA (SOT89-4), surface mount.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BSS87H6327FTSA1 RoHS compliant?

Yes, it is listed as RoHS3 Compliant (unverified).

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