BSS84PH6327XTSA2 P-Channel enhancement mode MOSFET from Infineon, rated for 60V drain-source voltage and 170mA continuous drain current. Offered in a surface-mount PG-SOT23 package.
Mfr Part #:

BSS84PH6327XTSA2

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel enhancement mode MOSFET from Infineon, rated for 60V drain-source voltage and 170mA continuous drain current. Offered in a surface-mount PG-SOT23 package.
✓ Total Stock: 3,059 pcs
$ Price Range: $0.05 - $0.29

BSS84PH6327XTSA2 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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3,059 pcs
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BSS84PH6327XTSA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSS84PH6327XTSA2 Description

Short technical summary and product information.

The Infineon BSS84PH6327XTSA2 is a P-Channel enhancement mode MOSFET from the SIPMOS small-signal transistor family. It is designed for logic level gate drive with a maximum gate threshold voltage of 2V and is rated for a maximum drain-source voltage of -60V and a continuous drain current of -170mA at 25°C.

 

Key electrical characteristics include a typical on-state resistance of 5.8 Ohm at VGS=-10V and 8 Ohm at VGS=-4.5V. The device features low gate charge (1 nC typical) and low input capacitance (15 pF typical), enabling efficient switching in low-power applications. It is avalanche rated with a single pulse avalanche energy of 2.6 mJ.

 

The MOSFET is housed in a PG-SOT23 surface-mount package and is supplied on tape and reel with 3000 pieces per reel. It is qualified to AEC Q101 for automotive applications and is halogen-free according to IEC61249-2-21.

BSS84PH6327XTSA2 Quick Information

Product Type: P-Channel MOSFET
Series: BSS84P
Canonical Name: Infineon Technologies BSS84PH6327XTSA2 P-Channel MOSFET
Subcategory: Small-Signal MOSFET

BSS84PH6327XTSA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BSS84PH6327XTSA2 Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.18 $0.18
50+ $0.13 $0.13
100+ $0.11 $0.11
500+ $0.08 $0.08
3,000+ $0.06 $0.06
9,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS84PH6327XTSA2 Features

  • P-Channel enhancement mode MOSFET.
  • Rated for 60V drain-source voltage.
  • 170mA continuous drain current.
  • Low on-resistance of 8 Ohm max.
  • AEC Q101 qualified for automotive.

BSS84PH6327XTSA2 Applications

  • Used in load switch circuits.
  • Ideal for battery management systems.
  • Suitable for DC-DC converter designs.
  • Applied in automotive control modules.

BSS84PH6327XTSA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSS84PH6327XTSA2?

The maximum drain-source voltage (Vdss) is -60 V.

What is the continuous drain current rating?

The continuous drain current (Id) is -170 mA at TA=25°C and -140 mA at TA=70°C.

What is the on-state resistance of this MOSFET?

The typical on-state resistance is 5.8 Ohm at VGS=-10V and ID=-0.17A, with a maximum of 8 Ohm. At VGS=-4.5V and ID=-0.14A, the typical resistance is 8 Ohm with a maximum of 12 Ohm.

What package is the BSS84PH6327XTSA2 available in?

It is available in a PG-SOT23 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is this MOSFET RoHS compliant?

The part is listed as RoHS3 Compliant, but this information is unverified.

Is the BSS84PH6327XTSA2 qualified for automotive applications?

Yes, it is AEC Q101 qualified.

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