BSS84LT1 BSS84LT1 is a P-Channel MOSFET from On Semiconductor with -50 V drain-source voltage and -130 mA continuous drain current in a SOT-23 surface mount package.
Mfr Part #:

BSS84LT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BSS84LT1 is a P-Channel MOSFET from On Semiconductor with -50 V drain-source voltage and -130 mA continuous drain current in a SOT-23 surface mount package.
✓ Total Stock: 1,160 pcs

BSS84LT1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,160 pcs
1160 pcs On Request 1 On Request On Request On Request On Request On Request

BSS84LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature Range
Power Dissipation
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

BSS84LT1 Description

Short technical summary and product information.

The BSS84LT1 is a single P-Channel MOSFET manufactured by On Semiconductor (onsemi). It features a maximum drain-to-source voltage (Vdss) of -50 V and a continuous drain current of -130 mA at 25°C ambient temperature. The device is built with MOSFET (Metal Oxide) technology and is designed for surface mount assembly.

 

Key electrical characteristics include a typical drain-to-source on-resistance (Rds(on)) of 4.7 Ohms at VGS = -5 V and ID = -100 mA, with a maximum of 10 Ohms. The gate threshold voltage (Vgs(th)) ranges from -0.9 V to -2.0 V at ID = -250 µA. The device can dissipate up to 225 mW at 25°C ambient and operates over a junction temperature range of -55°C to 150°C.

 

The BSS84LT1 is supplied in the industry-standard SOT-23 surface mount package (Case 318), which saves board space. It is Pb-Free and RoHS compliant. This part is suitable for low-power load switching and general-purpose applications where a P-Channel MOSFET is required.

BSS84LT1 Quick Information

Product Type: P-Channel MOSFET
Series: BSS84L
Canonical Name: BSS84LT1 P-Channel MOSFET, -50 V, -130 mA, SOT-23
Subcategory: Single MOSFET

BSS84LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSS84LT1 Features

  • P-Channel MOSFET with -50 V drain-source rating.
  • Continuous drain current of -130 mA at 25°C.
  • Low on-resistance: 10 Ohm max at VGS = -5 V.
  • Surface mount SOT-23 package saves board space.
  • Pb-Free and RoHS compliant.

BSS84LT1 Applications

  • Ideal for low-power load switching circuits.
  • Used in battery management and protection systems.
  • Suitable for signal-level switching applications.
  • Applicable in portable and battery-powered devices.

BSS84LT1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BSS84LT1?

The maximum drain-to-source voltage (Vdss) is -50 V.

What is the continuous drain current rating of the BSS84LT1?

The continuous drain current is -130 mA at TA = 25°C.

What is the package type for the BSS84LT1?

The BSS84LT1 is available in a SOT-23 surface mount package (Case 318).

What is the operating temperature range of the BSS84LT1?

The operating and storage temperature range is -55°C to 150°C.

Is the BSS84LT1 RoHS compliant?

Yes, the BSS84LT1 is RoHS3 compliant and Pb-Free.

What is the typical on-resistance of the BSS84LT1?

The typical drain-to-source on-resistance is 4.7 Ohms at VGS = -5 V and ID = -100 mA.

What is the gate threshold voltage range for the BSS84LT1?

The gate threshold voltage (Vgs(th)) ranges from -0.9 V to -2.0 V at VDS = VGS and ID = -250 µA.

Home
Account

Categories