| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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9,000 pcs
$0.06
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9000 pcs |
$0.06
|
1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
This NXP Semiconductors BSS84AK,215 is a P-Channel MOSFET designed for various electronic applications. It offers a maximum continuous drain current of 180mA and a maximum drain-source voltage of 50V.
The MOSFET features a low maximum drain source resistance of 7.5Ω and a typical gate charge of 0.26nC. Its maximum power dissipation is rated at 420mW. The operating temperature range spans from -55°C to 150°C, ensuring reliable performance in diverse environments.
Packaged in a compact SOT-23 surface-mount case, this 3-pin device is suitable for space-constrained designs. The enhancement mode channel type makes it versatile for switching and amplification tasks. Its forward voltage is typically 1.1V.
This component is suitable for general-purpose switching applications where a P-channel MOSFET is required. Its specifications make it a viable option for power management circuits and signal control within electronic devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
180 mA.
420 mW.
0.26 nC.
7.5 Ω.
SOT-23 surface mount package, 3 pins.
-55°C to +150°C.