| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,850 pcs
|
2850 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSS84-TP is a P-Channel enhancement-mode MOSFET from Micro Commercial Components. It offers a maximum drain-source voltage of 50 V and a continuous drain current of 130 mA. The device features a maximum on-resistance of 8 ohms at Vgs = 10 V and Id = 100 mA, with a gate threshold voltage of 2 V maximum at 250 µA. Input capacitance is 30 pF maximum at Vds = 25 V.
The MOSFET is housed in a surface mount SOT-23 package (also supplied as TO-236-3 or SC-59), allowing for space-efficient PCB mounting. It operates across a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 225 mW.
This component is suitable for low-power switching applications such as load switches and power management in portable electronics. It is listed as RoHS3 compliant and REACH unaffected, supporting regulatory compliance in design.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.10 | $0.10 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.07 | $0.07 |
| 3,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 50 V.
The device is offered in a SOT-23 surface mount package (also specified as TO-236-3 or SC-59).
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant.
The maximum continuous drain current is 130 mA.
The maximum on-resistance is 8 ohms at Vgs=10V and Id=100mA.
The maximum gate threshold voltage is 2V at Id=250µA.