PMEG4050ETP
NXP Semiconductors
The NXP Semiconductors PMEG4050ETP is a Schottky Diode designed for efficiency. It features a 40V reverse voltage and a 5A forward current.
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78,000 pcs
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78000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PANJIT BSS84_R1_00001 is a P-Channel Metal-Oxide Semiconductor Field-Effect Transistor. This component is designed for surface mount applications and operates within a temperature range of -55°C to 150°C.
Key electrical specifications include a maximum drain current (ID) of 0.13A and a maximum power dissipation of 0.2W. The FET technology utilized is Metal-Oxide Semiconductor, and it is configured as a single element device.
Thermal considerations include a peak reflow temperature of 260°C, with a maximum time at peak reflow temperature of 40 seconds. The terminal finish is matte tin. The component is classified under ECCN code EAR99 and adheres to RoHS3 compliance standards.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the PANJIT BSS84_R1_00001 is 0.13A.
The maximum power dissipation (Absolute) for the BSS84_R1_00001 is 0.2W.
The operating temperature range for the BSS84_R1_00001 is from -55°C to 150°C.
The peak reflow temperature for the BSS84_R1_00001 is 260°C.
Yes, the PANJIT BSS84_R1_00001 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSS84_R1_00001 is Level 1.
