| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS84 from Infineon is a P-channel enhancement mode vertical D-MOS transistor designed for various applications. It features a low threshold voltage, allowing for direct interface with C-MOS and TTL logic levels. This device is characterized by its high-speed switching performance and the absence of secondary breakdown.
Key electrical specifications include a drain-source voltage of up to 50V and a continuous drain current of 130mA. The drain-source on-state resistance is a maximum of 10 Ohms at a gate-source voltage of -10V and a drain current of -130mA. Input capacitance is typically 25pF, and output capacitance is typically 15pF, both measured at 1MHz.
This transistor is housed in a SOT-23 surface-mount package, making it suitable for compact designs. The datasheet notes that the device is supplied in an antistatic package, and the gate-source input must be protected against static discharge during handling.
Applications for the BSS84 include line current interrupters in telephone sets, and as relay drivers or high-speed line transformer drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSS84 is 50V.
The gate-source threshold voltage (VGSth) ranges from -0.8V to -2V.
The maximum continuous drain current (ID) for the BSS84 is 130mA.
The BSS84 is supplied in a SOT-23 SMD package.
The BSS84 is used as a line current interrupter in telephone sets and as a relay or high-speed line transformer driver.