| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,230 pcs
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2230 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSS83PE6327 is a P-Channel enhancement mode MOSFET from Infineon Technologies, designed for low-power switching applications. It features a drain-source voltage rating of 60 V and a continuous drain current of 330 mA at 25°C. The device offers a low maximum on-resistance of 2 Ohm at 10 V gate drive, ensuring efficient power handling.
This MOSFET is logic level compatible, with a typical gate threshold voltage of 1.5 V, allowing direct drive from 3.3V or 5V logic. It is avalanche rated and dv/dt rated, providing robustness in inductive switching environments. The small SOT-23-3 surface mount package (also known as SC-59 and TO-236-3) saves board space.
Key electrical characteristics include a maximum gate charge of 3.57 nC, typical input capacitance of 62 pF, and fast switching times with typical turn-on delay of 23 ns and rise time of 106 ns. The operating junction temperature range is -55°C to +150°C.
The BSS83PE6327 is suitable for load switching, DC-DC converter auxiliary circuits, and battery management in portable electronics. It is supplied in tape and reel packaging with 3000 pieces per reel.
The maximum drain-source voltage (Vdss) is 60 V.
The device is available in SOT-23-3 (also known as SC-59 and TO-236-3) surface mount package with supplier package PG-SOT23.
The operating temperature range is -55°C to +150°C (junction temperature).
It is reported as RoHS3 Compliant, but this status is unverified.
The gate threshold voltage (Vgs(th)) is typically 1.5 V, with a maximum of 2 V at ID = 80 µA.
The continuous drain current (ID) at TA = 25°C is 330 mA (0.33 A).
The maximum drain-source on-resistance (Rds(on)) at VGS = 10 V and ID = 330 mA is 2 Ohm, typical 1.4 Ohm.