| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,100 pcs
|
41100 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request |
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The Philips BSS83 is a symmetrical insulated-gate silicon MOS field-effect transistor. It is an N-channel enhancement mode type, sealed in a SOT143 envelope. This transistor features a low ON-resistance and low capacitances, making it suitable for analog and/or digital switching applications and as a switch driver.
Key electrical specifications include a maximum drain-source voltage (Vds) of 10V and a maximum continuous drain current (Id) of 50mA. The drain-source ON-resistance (Rds(on)) is a maximum of 45 Ohms when Vgs is 10V and Id is 0.1mA. The gate-source threshold voltage (Vgs(th)) ranges from a minimum of 0.1V to a maximum of 2.0V under specific test conditions.
This device is designed for general-purpose switching applications. The SOT143 package is a surface-mount type, suitable for automated assembly processes. The transistor is protected against excessive input voltages by integrated back-to-back diodes between the gate and substrate.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the BSS83 is 10 V.
The maximum continuous drain current for the BSS83 is 50 mA.
The maximum drain-source ON-resistance for the BSS83 at 10V VGS is 45 Ω.
The BSS83 is supplied in a SOT143 package.
The RoHS status of the BSS83 is RoHS3 Compliant.
The Moisture Sensitivity Level for the BSS83 is 1 Unlimited.
The REACH status of the BSS83 is REACH Unaffected.