| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,136 pcs
|
27136 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
322 pcs
|
322 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSS806NH6327 is an N-Channel Enhancement Mode MOSFET designed for low-voltage switching applications. It offers a maximum drain-source voltage of 20 V and a maximum continuous drain current of 2.3 A, making it suitable for load switching and power management tasks.
With a typical on-resistance of 45 mOhm at a gate-source voltage of 4.5 V, this device provides efficient conduction with low power losses. The gate charge is typically 1.7 nC, enabling fast switching with minimal drive requirements. Switching speeds are characterized by a typical rise time of 9.9 ns and a typical fall time of 3.7 ns.
The device is housed in a surface-mount SOT-23-3 package, which is compact and suitable for space-constrained PCB designs. It operates over a junction temperature range of -55 to 150 °C, ensuring reliable performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20 V.
The maximum continuous drain current is 2.3 A.
The typical on-resistance is 45 mOhm at a gate-source voltage of 4.5 V and a drain current of 2.3 A.
The operating temperature range is -55 to 150 °C.
It comes in a surface-mount SOT-23-3 package.