TC7SH00FUTE85L,JF
Toshiba
The Toshiba TC7SH00FUTE85L,JF is a logic gate IC. It features RoHS3 compliance and an MSL of 1 Unlimited.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The Infineon BSS806N is a high-performance N-channel MOSFET designed for small-signal and small-power applications. It operates as an enhancement mode device and features an ultra logic level rating, specifically 1.8V, making it ideal for low-voltage control circuits.
Key electrical characteristics include a Drain-Source Breakdown Voltage of 20V and a Continuous Drain Current of up to 2.3A at 25°C. The Drain-Source On-State Resistance is notably low, measuring 82mΩ at VGS=1.8V and 1.3A, and 57mΩ at VGS=2.5V and 2.3A. Dynamic characteristics such as input capacitance (Ciss) are 370pF, output capacitance (Coss) are 118pF, and reverse transfer capacitance (Crss) are 20pF.
This MOSFET is avalanche rated and qualified according to AEC Q101 standards, indicating its suitability for demanding automotive and industrial environments. It is supplied in a compact PG-SOT23 package, suitable for surface-mount designs. The device is 100% lead-free and RoHS compliant, with halogen-free materials used in its construction.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BSS806N is packaged in a SOT-23 surface-mount package.
The drain-source breakdown voltage of the BSS806N is 20V.
The maximum continuous drain current is 2.3A at 25°C and 1.9A at 70°C.
Yes, the BSS806N is RoHS3 compliant.
The maximum gate-source voltage is ±8V.
