| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSS670S2L is an N-Channel enhancement mode logic level MOSFET from Infineon Technologies, part of the OptiMOS buck converter series. It features a drain-source breakdown voltage of 55V and a continuous drain current of 540mA at 25°C ambient temperature. The maximum drain-source on-state resistance is 650mΩ at 270mA and 10V gate drive, with a typical value of 346mΩ under the same conditions.
This MOSFET is designed for logic level gate drive, with a maximum gate threshold voltage of 2V at 2.7µA drain current. It supports gate-source voltages up to ±20V and has a maximum power dissipation of 360mW at 25°C. The device operates over a junction temperature range of -55°C to 150°C and is qualified according to AEC Q101 for automotive applications.
The BSS670S2L is available in a PG-SOT23 surface mount package with tape and reel packaging options. It is suitable for low-power switching applications where logic level control is required. The device is avalanche rated and includes an integrated inverse diode for inductive load handling.
The drain-source breakdown voltage is 55V minimum.
The maximum continuous drain current is 540mA at 25°C ambient temperature, and 430mA at 70°C.
The maximum on-resistance is 650mΩ at 270mA drain current and 10V gate-source voltage. At 4.5V gate drive, the maximum is 825mΩ.
The operating junction temperature range is -55°C to 150°C.
The device is available in a PG-SOT23 surface mount package (TO-236-3, SC-59, SOT-23-3).
The RoHS compliance status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.
Yes, the device is qualified according to AEC Q101.