| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Tape & Reel |
The BSS63LT1 from On Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various discrete semiconductor applications. This component offers a collector-emitter breakdown voltage of 100V and a maximum collector current of 100mA.
Key electrical characteristics include a transition frequency of 95MHz and a maximum power dissipation of 225mW. The collector-emitter saturation voltage is specified at 250mV at 2.5mA base current and 25mA collector current. The collector cutoff current is a maximum of 100nA (ICBO).
This transistor is housed in a SOT-23-3 (TO-236) surface-mount package. It is supplied in tape and reel packaging with a standard package quantity of 3,000 units. The MSL rating is 1, indicating unlimited shelf life under standard conditions.
Designed for general-purpose amplification and switching, the BSS63LT1 is a reliable choice for engineers working with discrete components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 100V.
The maximum collector current is 100mA.
The transition frequency is 95MHz.
The maximum power dissipation is 225mW.
The package type is SOT-23-3 (TO-236).
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.